Details

---

BUY 2SC3787S https://www.utsource.net/itm/p/12614827.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCE	-	60	-	V
Emitter-Base Voltage	VEB	-	5	-	V
Collector Current	IC	-	15	-	A
Base Current	IB	-	1.5	-	A
Power Dissipation	PT	-	110	-	W	TC = 25掳C
Forward Current Transfer Ratio (hFE)	尾	20	100	400	-	IC = 150 mA, VCE = 10 V
Storage Temperature Range	TSTG	-55	-	150	掳C
Operating Junction Temperature	TJ	-55	-	150	掳C

Instructions for Use:

1. Mounting: Ensure that the transistor is mounted with adequate heat sinking to manage the power dissipation, especially when operating near the maximum ratings.
2. Biasing: Proper biasing is crucial to ensure stable operation. Use the typical h_FE value for initial design calculations, but verify performance over the full range of h_FE.
3. Overvoltage Protection: Consider using overvoltage protection circuits to prevent damage from voltage spikes, particularly in applications where the transistor is exposed to high voltages.
4. Thermal Management: Monitor the junction temperature to avoid exceeding the maximum operating temperature. Use thermal grease and heatsinks as necessary.
5. Storage: Store the transistor in a dry, cool place within the specified storage temperature range to prevent damage.
6. Handling: Handle the transistor with care to avoid mechanical stress, which can affect its performance and reliability.
7. Testing: Before finalizing the design, test the transistor under actual operating conditions to ensure it meets the required specifications.

(For reference only)