Details

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BUY CY62256NLL-55SNI https://www.utsource.net/itm/p/12617381.html

Parameter	Description	Value	Unit
Product Family	SRAM (Static RAM)
Device Type	CY62256NLL-55SNI	256K x 8-bit CMOS SRAM
Supply Voltage	Operating voltage range	4.5 to 5.5	V
Access Time	Maximum access time	55	ns
Data Setup Time	Minimum data setup time before clock edge	10	ns
Data Hold Time	Minimum data hold time after clock edge	3	ns
Address Setup Time	Minimum address setup time	15	ns
Output Enable Delay Time	Output enable to output valid delay	15	ns
Power-down Mode	Current consumption in power-down mode	1	渭A
Package Type	Package type	SOIC (Small Outline IC)
Pin Count	Number of pins	24
Operating Temperature	Range for industrial temperature operation	-40 to +85	掳C

Instructions for Use:

1. Power Supply Connection: Ensure the supply voltage is within the specified range (4.5V to 5.5V). Connect VCC and GND correctly.
2. Signal Timing: Adhere strictly to the timing parameters provided, especially for access time, setup times, and hold times, to ensure reliable operation.
3. Addressing and Data Lines: Properly connect all address lines (A0-A17) and data lines (DQ0-DQ7) as per your system design.
4. Output Enable (OE): Control the OE pin to manage when data outputs are active. This should be synchronized with your read cycles.
5. Write Enable (WE): Use the WE pin to initiate write operations. Ensure that it is activated only during intended write cycles.
6. Chip Enable (CE): The CE pin must be low for the device to be active. It can be used to select this SRAM in a multi-device configuration.
7. Power-down Mode: To enter power-down mode, set both CE and OE high. This reduces current consumption to approximately 1 渭A.
8. Temperature Considerations: Operate within the specified temperature range (-40掳C to +85掳C) to avoid damage or unreliable performance.

For detailed application notes and further technical support, refer to the official Cypress Semiconductor documentation or datasheet for the CY62256NLL-55SNI.

(For reference only)