Details
BUY SKIIP36NAB126V10 https://www.utsource.net/itm/p/12617618.html
Parameter | Symbol | Min | Typ | Max | Unit | Description |
---|---|---|---|---|---|---|
Rated Voltage | VDSS | - | 1200 | - | V | Maximum repetitive drain-to-source voltage |
Continuous Drain Current | ID | - | - | 600 | A | Continuous drain current at Tc = 25°C |
Pulse Drain Current | ICM | - | - | 900 | A | Non-repetitive peak drain current (10 ms, 1% duty) |
Gate-Source Voltage | VGS | -15 | - | 15 | V | Maximum gate-to-source voltage |
Total Power Dissipation | PD | - | - | 3600 | W | Total power dissipation at Tc = 25°C |
Junction Temperature | TJ | - | - | 175 | °C | Maximum junction temperature |
Storage Temperature | TSTG | -55 | - | 150 | °C | Operating and storage temperature range |
Thermal Resistance | Rth(j-c) | - | 0.45 | - | K/W | Thermal resistance from junction to case |
Instructions for Use:
Voltage Handling:
- Ensure that the maximum drain-to-source voltage (VDSS) does not exceed 1200V.
- The gate-to-source voltage (VGS) should be within the range of -15V to +15V.
Current Handling:
- The continuous drain current (ID) should not exceed 600A at a case temperature (Tc) of 25°C.
- For pulse applications, the non-repetitive peak drain current (ICM) can reach up to 900A for a duration of 10 ms with a 1% duty cycle.
Power Dissipation:
- The total power dissipation (PD) should not exceed 3600W at a case temperature (Tc) of 25°C.
- Proper heat sinking is essential to manage the thermal resistance (Rth(j-c)) and keep the junction temperature (TJ) below 175°C.
Temperature Management:
- The operating and storage temperature range (TSTG) is from -55°C to 150°C.
- Monitor the junction temperature (TJ) to ensure it does not exceed 175°C, as this can lead to device failure.
Mounting and Assembly:
- Follow the recommended mounting torque and procedures to ensure proper contact and thermal performance.
- Use appropriate thermal interface materials (TIMs) to enhance heat transfer from the device to the heatsink.
Gate Drive:
- Use a gate driver circuit that can provide the necessary gate drive voltage and current to switch the device efficiently.
- Ensure the gate drive circuit has adequate protection against overvoltage and undercurrent conditions.
Protection Circuits:
- Implement overcurrent, overvoltage, and thermal protection circuits to safeguard the device from potential damage.
- Consider using snubber circuits to suppress voltage transients during switching operations.
Storage and Handling:
- Store the device in a dry, cool environment within the specified storage temperature range.
- Handle the device with care to avoid mechanical stress and static discharge.
By adhering to these parameters and instructions, you can ensure reliable and efficient operation of the SKIIP36NAB126V10.
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