Details

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BUY 2SA798 https://www.utsource.net/itm/p/12620535.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	45	V	IC = 0.1A, Tc = 25掳C
Base-Emitter Voltage	VBE	-	-	6.5	V	IC = 0.1A, Tc = 25掳C
Collector Current	IC	-	-	0.15	A	VCE = 30V, Tc = 25掳C
Base Current	IB	-	-	0.015	A	VCE = 30V, Tc = 25掳C
Power Dissipation	PD	-	-	625	mW	Ta = 25掳C
Transition Frequency	FT	-	150	-	MHz	IC = 0.1mA, VCE = 10V
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions: Handle the 2SA798 with care to avoid static damage. Ensure all connections are secure and correct.
2. Operating Environment: Operate within specified temperature ranges to ensure reliable performance. Avoid exposing the device to temperatures outside the storage range.
3. Power Supply: Ensure that the power supply voltage does not exceed the maximum collector-emitter voltage (VCEO).
4. Current Limitation: Do not exceed the maximum collector current (IC) or base current (IB) to prevent damage to the transistor.
5. Dissipation Management: Keep the power dissipation below the rated maximum (PD) to avoid overheating. Consider heat sinks if necessary.
6. Frequency Operation: For applications requiring high-frequency operation, ensure that the operating frequency is within the transition frequency (FT) limits.
7. Testing and Validation: Always test the circuit thoroughly under all expected operating conditions before deployment.

(For reference only)