IXTL2N450

IXTL2N450


Specifications
Details

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Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage VDSS - - 450 V Maximum drain-to-source voltage
Gate-Source Voltage VGS -10 - 15 V Maximum gate-to-source voltage
Continuous Drain Current ID - - 2 A Continuous drain current at Tc=25掳C
Pulse Drain Current IDM - - 8 A Pulse drain current
Gate Charge Qg - 30 - nC Total gate charge
Input Capacitance Ciss - 1600 - pF Input capacitance
Output Capacitance Coff - 220 - pF Output capacitance
Reverse Transfer Capacitance Crss - 260 - pF Reverse transfer capacitance
RDS(on) at VGS=10V RDS(on) - 0.5 - On-resistance

Instructions:

  1. Handling and Storage: Store in a dry, cool place. Avoid exposure to high humidity or extreme temperatures.
  2. Mounting: Ensure proper heat sinking for applications where the device will operate near its maximum ratings.
  3. Electrical Connections: Connect the gate with a low-inductance path to minimize noise and ensure stable operation.
  4. Gate Drive: Apply gate voltages within the specified limits to prevent damage to the gate oxide.
  5. Pulse Operation: For pulse operation, refer to the IDM (pulse drain current) rating and ensure that the duty cycle does not exceed recommended levels.
  6. Thermal Considerations: Monitor the junction temperature to stay within safe operating limits. Use appropriate thermal management techniques if necessary.
  7. ESD Protection: Handle with care to avoid electrostatic discharge damage. Use ESD-safe tools and workstations.

Note: Always consult the latest datasheet from the manufacturer for the most accurate and up-to-date information.

(For reference only)

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