Details

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BUY BIT1502 https://www.utsource.net/itm/p/12620632.html

Parameter	Description	Value
Part Number	BIT1502
Type	Bipolar Transistor
Polarity	NPN
Collector-Emitter Voltage (Vceo)	Maximum voltage between collector and emitter with the base open	30 V
Emitter-Base Voltage (Vebo)	Maximum voltage between emitter and base	5 V
Collector-Base Voltage (Vcbo)	Maximum voltage between collector and base with the emitter open	30 V
Collector Current (Ic)	Continuous collector current	150 mA
Power Dissipation (Ptot)	Total power dissipation	350 mW
Storage Temperature Range (Tstg)	Temperature range for storage	-65°C to 150°C
Operating Temperature Range (Topr)	Temperature range for operation	-40°C to 125°C
Transition Frequency (ft)	Frequency at which the current gain falls to 1	150 MHz
DC Current Gain (hFE)	Typical DC current gain	100 to 300
Package Type	SOT-23
Mounting Type	Surface Mount

Instructions for Use

1. Handling Precautions:

   • Handle the BIT1502 with care to avoid damage to the leads or body.
   • Use appropriate ESD (Electrostatic Discharge) protection when handling the device.

2. Soldering:

   • Use a temperature-controlled soldering iron set to a maximum of 300°C.
   • Soldering time should not exceed 3 seconds per lead.
   • Allow the device to cool down before handling.

3. Circuit Design:

   • Ensure that the operating conditions do not exceed the maximum ratings listed in the table.
   • Use decoupling capacitors near the power supply lines to reduce noise and improve stability.
   • Consider thermal management if the device is expected to dissipate significant power.

4. Storage:

   • Store the BIT1502 in a dry, cool place away from direct sunlight.
   • Follow the recommended storage temperature range to prevent damage.

5. Testing:

   • Use a multimeter to check for continuity and resistance between the leads.
   • Verify the hFE (current gain) using a transistor tester or a similar device.

6. Application Notes:

   • The BIT1502 is suitable for general-purpose switching and amplification applications.
   • For high-frequency applications, consider the transition frequency (ft) and parasitic capacitances.

7. Disposal:

   • Dispose of the device in accordance with local environmental regulations.
   • Do not incinerate the device as it may release harmful substances.

(For reference only)