Details

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BUY AT27C040-90JU https://www.utsource.net/itm/p/12622697.html

Parameter	Description	Value
Device	High Performance CMOS UV-Erasable PROM	AT27C040-90JU
Organization	Memory Organization	512K x 8
Supply Voltage (Vcc)	Operating Supply Voltage	4.5V to 5.5V
Standby Current	Standby Current	1 渭A max
Active Current	Active Current	30 mA max
Access Time	Access Time (typical)	90 ns
Write Cycle Time	Write Cycle Time	6 ms
Package Type	Package	40-Pin Plastic DIP
Operating Temperature	Operating Temperature Range	-40掳C to +85掳C
Programming Voltage	Programming Voltage	Vpp = 12.5V 卤 0.5V
Erase Method	Erase Method	UV Light (Typically 20mW/cm2 for 20 minutes)
Data Retention	Data Retention	10 years

Instructions:

1. Power Supply: Ensure the supply voltage (Vcc) is within the specified range of 4.5V to 5.5V.
2. Programming: Apply the programming voltage (Vpp) of 12.5V 卤 0.5V during write operations. The write cycle time is approximately 6 milliseconds.
3. Erase Operation: To erase the device, expose it to UV light with an intensity of typically 20mW/cm2 for about 20 minutes.
4. Handling Precautions: Handle the device with care to avoid damage from electrostatic discharge (ESD).
5. Storage and Use: Store in a dry environment and use within the recommended operating temperature range (-40掳C to +85掳C).
6. Standby Mode: When not in active use, ensure the standby current does not exceed 1 渭A to minimize power consumption.

For detailed specifications and additional information, refer to the datasheet provided by the manufacturer.

(For reference only)