Details

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BUY 2SC1983 https://www.utsource.net/itm/p/12623372.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO				60	V
Collector-Base Voltage	VCBO				80	V
Emitter-Base Voltage	VEBO		-5			V
Collector Current	IC			1.5	3	A
Base Current	IB			0.1	0.2	A
Power Dissipation	PD	Ta = 25掳C			45	W
Junction Temperature	Tj		-55		150	掳C
Storage Temperature	Tstg		-55		150	掳C

Instructions for Use:

1. Handling Precautions: Avoid exceeding the maximum ratings listed to prevent damage to the transistor.
2. Thermal Management: Ensure adequate heat sinking if operating near the maximum power dissipation limits.
3. Biasing: Proper biasing is crucial to ensure the transistor operates in its intended region (e.g., active, saturation).
4. Storage and Operation Temperature: Operate and store within the specified temperature ranges to maintain reliability.
5. Mounting: Follow manufacturer guidelines for mounting to ensure optimal thermal performance and mechanical integrity.

(For reference only)