Details

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BUY HN27C4096ACC-10 https://www.utsource.net/itm/p/12623906.html

Parameter	Description	Value
Device Type	High-Speed CMOS EEPROM	4 Mbit (512K x 8)
Package Type	SOP (Small Outline Package)	8-Pin
Operating Voltage	Supply Voltage Range	VCC = 2.7V to 3.6V
Standby Current	Current Consumption in Standby Mode	≤ 1 μA (Typical)
Active Current	Current Consumption in Active Mode	≤ 5 mA (Typical)
Access Time	Typical Access Time	70 ns (Maximum)
Endurance	Write/Erase Cycles	1,000,000 cycles (Minimum)
Data Retention	Data Retention Time	10 years (Minimum)
Temperature Range	Operating Temperature Range	-40°C to +85°C
Write Cycle Time	Time Required for a Write Operation	5 ms (Maximum)
Organization	Memory Organization	512K x 8

Instructions:

1. Power Supply Connection: Connect VCC to the power supply and GND to ground. Ensure the supply voltage is within the specified range.
2. Address Lines: Connect address lines A0-A18 to select the desired memory location.
3. Data Lines: Connect data lines D0-D7 for data input/output operations.
4. Control Signals:
   • Chip Select (CS#): Active low signal to enable chip operation.
   • Output Enable (OE#): Active low signal to enable data output.
   • Write Protect (WP#): Active low signal to protect against accidental writes.
   • Write Enable (WE#): Active low signal to initiate write operations.
5. Write Operations: Before performing a write, ensure that CS#, WP#, and WE# are set to low, and OE# is high. The write cycle time must not be exceeded.
6. Read Operations: Set CS# and OE# to low to read data from the selected address. Ensure WE# is high during read operations.
7. Handling Precautions: Avoid exceeding the maximum operating voltage and temperature ranges to prevent damage to the device.
8. Storage Conditions: Store the device in a dry environment when not in use to maintain data integrity.

For detailed specifications and additional information, refer to the datasheet provided by the manufacturer.

(For reference only)