PM1012GP

PM1012GP


Specifications
SKU
265195
Details

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Low Power Precision Operational Amplifier
Parameter Description Value
Part Number Device Identifier PM1012GP
Type Device Classification MOSFET
Package Encapsulation Style TO-252 (DPAK)
Vds (V) Drain-to-Source Voltage 60V
Id (A) Continuous Drain Current 4.8A
Rds(on) (m惟) On-State Resistance at 25掳C 75 m惟
Qg (nC) Total Gate Charge 30 nC
Vgs(th) (V) Gate Threshold Voltage 1.0 to 2.5V
Fmax (MHz) Maximum Frequency 5 MHz
Power Dissipation (W) Maximum Power Dissipation (at Tc = 25掳C) 2.9W
Operating Temp (掳C) Junction Temperature Range -55 to 150掳C

Instructions for Use:

  1. Handling and Storage:

    • Handle the PM1012GP with care to avoid damage to the leads or body.
    • Store in a dry, cool place away from direct sunlight and corrosive materials.
  2. Mounting:

    • Ensure that the device is mounted on a suitable heatsink if operating near maximum power dissipation.
    • Follow proper soldering techniques to ensure reliable connections without overheating the device.
  3. Electrical Connections:

    • Verify correct polarity when connecting the drain, source, and gate terminals.
    • Avoid exceeding the maximum ratings for Vds, Id, and power dissipation.
  4. Testing:

    • Before applying full operational voltages and currents, perform initial testing at reduced levels to ensure proper function.
    • Regularly inspect the device for signs of wear or damage during operation.
  5. Safety Precautions:

    • Always use appropriate protective equipment when handling electrical components.
    • Be aware of potential hazards associated with high voltage and current applications.
(For reference only)

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