Details

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BUY SKND50E04 https://www.utsource.net/itm/p/281363.html
Ultrafast Epitaxial Diode Modules

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Forward Voltage	VF	IF = 5A	-	0.95	1.2	V
Reverse Recovery Time	trr	IF = 5A, dI/dt=100A/us	35	-	-	ns
Junction Temperature	TJ	Operating	-55	-	175	掳C
Storage Temperature	TSTG		-65	-	150	掳C
Maximum RMS Current	IRMS	f=50Hz, sin wave	-	-	7.1	A
Peak Repetitive Forward Current	IFSM	T=1ms, 10% duty cycle	-	-	100	A

Instructions for SKND50E04:

1. Installation and Handling:

   • Handle the device with care to avoid damage to the leads and body.
   • Ensure that the device is securely fastened to the mounting surface to prevent mechanical stress.

2. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table to avoid damage or degradation of performance.
   • Ensure adequate heat sinking if operating at high currents or temperatures close to the maximum junction temperature.

3. Electrical Connections:

   • Verify correct polarity before applying power.
   • Use short, heavy-gauge wires for connections to minimize voltage drops and heating effects.

4. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready to use to prevent static damage.

5. Testing:

   • Perform initial testing at low currents and gradually increase to ensure proper operation.
   • Regularly check connections and mounting for any signs of overheating or poor contact.

6. Disposal:

   • Follow local regulations for disposal of electronic components.
   • Consider recycling options to reduce environmental impact.

(For reference only)