TT251N14KOF

TT251N14KOF

Category: Modules

Specifications
SKU
281482
Details

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SCR / Diode Modules up to 1400V SCR / SCR Phase Control
Parameter Description Value Unit
Part Number Device Identifier TT251N14KOF -
Type Device Type N-Channel MOSFET -
VDS Drain-Source Voltage 100 V
VGS(th) Gate Threshold Voltage 1.8 to 3.6 V
ID Continuous Drain Current (Tc=25°C) 14 A
RDS(on) On-State Resistance (VGS=10V) 12.5
PD Power Dissipation (Tc=25°C) 67 W
Junction Temp Maximum Operating Temperature -55 to 150 °C
Package Encapsulation Type TO-252 -

Instructions for Use:

  1. Handling Precautions: The TT251N14KOF is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
  2. Mounting: Ensure that the device is securely mounted on a suitable heatsink if operating at high power levels to maintain junction temperature within specified limits.
  3. Biasing: Apply gate voltage carefully to avoid exceeding the maximum ratings. Ensure VGS does not exceed ±20V to prevent damage.
  4. Thermal Considerations: Monitor the junction temperature, especially under continuous operation. Use adequate cooling methods if necessary.
  5. Storage: Store in a dry environment away from direct sunlight and sources of heat. Follow anti-static storage practices.
  6. Testing: When testing the device, ensure all parameters are within the specified limits to avoid premature failure or performance issues.
(For reference only)

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