Details

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BUY DS1220Y-120 https://www.utsource.net/itm/p/281724.html
16k Nonvolatile SRAM

Parameter	Description
Device Type	Nonvolatile static RAM (NVSRAM)
Manufacturer	Maxim Integrated
Package	SOIC-8
Operating Voltage	2.5V to 5.5V
Memory Size	1024 x 8 bits
Data Retention	10 years at 85掳C, 20 years at 25掳C
Write Cycle	Unlimited
Standby Current	1 渭A (typical)
Active Current	5 mA (typical)
Operating Temperature Range	-40掳C to +85掳C
Storage Temperature Range	-65掳C to +150掳C

Instructions for Use:

1. Power Supply Connection: Connect VCC to a power supply within the operating voltage range (2.5V to 5.5V) and GND to ground.
2. Data Access: The DS1220Y-120 can be accessed like a standard SRAM using CE (Chip Enable), OE (Output Enable), and WE (Write Enable) control lines.
3. Nonvolatile Operation: Ensure that the device is properly powered down or switched to standby mode to maintain data integrity in nonvolatile memory.
4. Handling Precautions: Handle with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.
5. Programming: No special programming required; operates as a standard SRAM with automatic data retention during power loss.
6. Mounting: Suitable for surface mount technology (SMT) processes. Follow standard reflow soldering profiles suitable for SOIC packages.

(For reference only)