Details

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BUY NTF3055L108T1 https://www.utsource.net/itm/p/325391.html
Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223

Parameter	Symbol	Min	Typ	Max	Unit	Description
Continuous Collector Current	IC	-	10	-	A	Continuous collector current
Pulse Collector Current	ICM	-	20	-	A	Pulse collector current (Tc = 25掳C)
Collector-Emitter Voltage	VCEO	-	-	30	V	Collector-emitter voltage
Emitter-Collector Voltage	VEBO	-	-	5	V	Emitter-collector voltage
Base-Emitter Voltage	VBE(on)	0.8	-	1.5	V	Base-emitter voltage at IC = 1A
Power Dissipation	PD	-	-	62.5	W	Total power dissipation (Tc = 25掳C)
Junction Temperature	Tj	-	-	150	掳C	Maximum junction temperature
Storage Temperature Range	Tstg	-55	-	150	掳C	Operating temperature range

Instructions for NTF3055L108T1:

1. Handling and Installation:

   • Handle the device with care to avoid damage from electrostatic discharge (ESD).
   • Ensure proper heat sinking when installing, especially if operating near maximum power dissipation.

2. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure that the junction temperature does not exceed 150掳C during operation.

3. Mounting:

   • Use appropriate mounting hardware to secure the device.
   • Apply thermal compound between the device and heatsink for optimal heat transfer.

4. Electrical Connections:

   • Verify correct polarity before connecting power.
   • Ensure all connections are secure and insulated as necessary to prevent short circuits.

5. Storage:

   • Store in a dry, cool environment within the specified storage temperature range (-55掳C to 150掳C).

6. Testing:

   • Perform initial testing under controlled conditions to verify performance parameters.
   • Regularly inspect for signs of wear or damage.

7. Safety Precautions:

   • Always follow safety guidelines when working with high voltages and currents.
   • Disconnect power before making any adjustments or repairs.

(For reference only)