Details

---

BUY BFQ136 https://www.utsource.net/itm/p/328005.html
NPN 4GHz wideband transistorNPN 4G

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	VCEO	-	-	40	V	Maximum voltage between collector and emitter with the base open.
Collector-Base Voltage	VCBO	-	-	50	V	Maximum voltage between collector and base with the emitter open.
Emitter-Base Voltage	VEBO	-	-	6	V	Maximum voltage between emitter and base with the collector open.
Collector Current	IC	-	-	200	mA	Continuous collector current.
Power Dissipation	PD	-	-	350	mW	Maximum power dissipation at Tc = 25掳C.
Total Device Dissipation	PT	-	-	350	mW	Maximum total device dissipation at Tc = 25掳C.
Junction Temperature	TJ	-	-	150	掳C	Maximum junction temperature.
Storage Temperature Range	TSTG	-55	-	150	掳C	Operating temperature range for storage.

Instructions:

1. Handling Precautions: The BFQ136 is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling.
2. Mounting: Ensure good thermal contact if high power dissipation is expected. Avoid mechanical stress on the leads during soldering.
3. Operating Conditions: Operate within specified voltage and current limits to prevent damage. Pay special attention to the maximum junction temperature.
4. Soldering: Use a controlled temperature soldering iron and avoid overheating. Suggested soldering temperature: 260掳C for 10 seconds.
5. Testing: When testing, ensure that the device is not subjected to voltages or currents exceeding the maximum ratings.

(For reference only)