Details

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BUY IXTH62N25 https://www.utsource.net/itm/p/382380.html
MegaMOSFET

Parameter	Symbol	Value	Unit	Notes
Maximum Drain Current	ID	62	A	@ Tc=25°C, Pulse Width ≤ 300μs, Duty Cycle = 1%
Maximum Drain-to-Source Voltage	VDS	250	V
Gate Threshold Voltage	VGS(th)	4.0 to 5.0	V	@ ID = 250μA, Tc=25°C
Continuous Drain Current	ID	29	A	@ TC=25°C
RDS(on)	RDS(on)	8.5	mΩ	@ VGS = 10V, ID = 29A, Tc=25°C
Total Power Dissipation	PD	250	W	@ TC=25°C
Junction Temperature	TJ	-55 to +175	°C
Storage Temperature	TSTG	-55 to +150	°C

Instructions:

1. Handling: The IXTH62N25 is sensitive to ESD (Electrostatic Discharge). Handle with care and use proper ESD protection measures.
2. Mounting: Ensure good thermal management due to high power dissipation capabilities. Use a heatsink or cooling solution as necessary.
3. Operating Conditions: Do not exceed the maximum ratings listed in the table to avoid damaging the device.
4. Gate Drive: Apply appropriate gate drive voltages to ensure reliable operation. The gate threshold voltage range must be considered for circuit design.
5. Storage and Operation Temperature: Ensure that both storage and operating temperatures are within the specified limits to maintain performance and longevity.
6. Pulse Current Handling: Be aware of the conditions under which pulse current ratings apply (e.g., duty cycle and pulse width).
7. Soldering: Follow recommended soldering profiles to prevent damage during assembly.

(For reference only)