Details

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BUY IXFH13N90 https://www.utsource.net/itm/p/384536.html
HIPERFET Power MOSFTETs

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source On-State Resistance	RDS(on)	VGS = 10V, ID = 4.2A	-	0.17	-	惟
Gate-Source Threshold Voltage	VGS(th)	ID = 1mA	2.0	3.0	4.0	V
Drain Current	ID	VGS = 10V	-	13	-	A
Breakdown Voltage	BVdss	-	-	900	-	V
Input Capacitance	Ciss	VDS = 15V, VGS = 0V	-	1360	-	pF
Output Capacitance	Coff	VDS = 15V, VGS = 0V	-	380	-	pF
Reverse Transfer Capacitance	Crss	VDS = 15V, VGS = 0V	-	980	-	pF
Total Gate Charge	Qg	VDS = 500V	-	45	-	nC

Instructions for IXFH13N90:

1. Handling and Storage: Store in a dry environment and handle with care to avoid damage to the device.
2. Mounting: Ensure proper mounting techniques are used to prevent mechanical stress on the device.
3. Soldering: Use appropriate soldering temperatures and times to avoid thermal damage. Recommended peak soldering temperature is 260掳C for 10 seconds.
4. Electrical Connections: Ensure all electrical connections are secure and correctly wired to prevent short circuits or incorrect operation.
5. Operating Conditions: Operate within specified voltage and current limits to ensure reliable performance and longevity of the device.
6. Heat Dissipation: Provide adequate heat dissipation if operating at high currents to maintain junction temperature within safe limits.
7. Testing: Before final assembly, test the device under conditions similar to its intended application to verify correct operation.

(For reference only)