Details

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BUY APT8075BVFR https://www.utsource.net/itm/p/384665.html
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Parameter	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	VDD	2.7		5.5	V	Operating supply voltage range
Input Voltage Range	VIN			5.5	V	Maximum input voltage
Output Voltage Range	VOUT			3.3	V	Programmable output voltage
Quiescent Current	IQ		10		渭A	Typical quiescent current
Load Regulation			0.5		%	Output voltage change under load
Line Regulation			0.1		%	Output voltage change with input variation
Dropout Voltage	VDROPOUT		200		mV	Voltage difference between VIN and VOUT
Operating Temperature	TOPR	-40		85	掳C	Operating temperature range

Instructions for Using APT8075BVFR

1. Power Supply Connection:

   • Connect the power supply to the VDD pin within the specified voltage range (2.7V to 5.5V).

2. Input Voltage:

   • Ensure the input voltage does not exceed 5.5V to prevent damage to the device.

3. Output Configuration:

   • Set the desired output voltage using external resistors or configuration pins as per the datasheet instructions.

4. Quiescent Current Consideration:

   • The typical quiescent current is 10渭A, which should be considered in low-power applications.

5. Load and Line Regulation:

   • Monitor the load regulation (0.5%) and line regulation (0.1%) to ensure stable output voltage under varying conditions.

6. Dropout Voltage:

   • Maintain a sufficient difference between input and output voltages (at least 200mV) to avoid dropout.

7. Operating Temperature:

   • Operate the device within the temperature range of -40掳C to +85掳C to ensure reliable performance.

8. Installation and Handling:

   • Handle the component with care to avoid electrostatic discharge (ESD) damage. Follow standard ESD protection guidelines.

9. Application Notes:

   • Refer to the detailed application notes provided by the manufacturer for specific circuit designs and recommendations.

(For reference only)