Details
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Thyristor Diode Module; Leaded Process Compatible:Yes
Parameter | Description |
---|---|
Part Number | SKKH250/12E |
Type | MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) |
Configuration | N-Channel |
VDS (Max Drain-Source Voltage) | 1200 V |
ID (Continuous Drain Current) | 25 A at 25°C, 17.5 A at 100°C |
RDS(on) (On-State Resistance) | 0.08 Ohm at 25°C, 0.12 Ohm at 100°C |
Power Dissipation (PD) | 340 W |
Operating Temperature Range | -55°C to +150°C |
Package Type | TO-247 |
Features | Low RDS(on), High Switching Speed, Thermally Stable |
Instructions for Use:
- Mounting and Handling: Ensure proper handling during installation to avoid damage. Use heat sinks or cooling solutions if operating near maximum current limits.
- Electrical Connections: Verify all connections are secure and correctly rated for the application's voltage and current requirements.
- Thermal Management: Adequate cooling is necessary when operating at high currents to prevent overheating and ensure long-term reliability.
- Storage Conditions: Store in a dry environment away from direct sunlight and extreme temperatures.
- Safety Precautions: Always follow safety guidelines when working with high voltages and currents to prevent injury or equipment damage.
For detailed specifications and more advanced applications, refer to the manufacturer's datasheet or technical documentation.
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