Details

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BUY TT66N1200KOC https://www.utsource.net/itm/p/386971.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Breakdown Voltage	V(BR)DSS				1200	V
Forward Transconductance	gfs	VGS = 10V, ID = 10A		3.5		S/m
Input Capacitance	Ciss	VDS = 15V, f = 1MHz		4600		pF
Output Capacitance	Coss	VDS = 15V, f = 1MHz		180		pF
Reverse Transfer Capacitance	Crss	VDS = 15V, f = 1MHz		1700		pF
Total Gate Charge	Qg	VGS = 15V		110		nC
Threshold Voltage	Vth	ID = 1mA	2.0	4.0	6.0	V
On-State Resistance	RDS(on)	VGS = 10V, ID = 20A	0.06			Ω

Instructions for TT66N1200KOC:

1. Storage and Handling:

   • Store in a dry environment to prevent moisture damage.
   • Handle with care to avoid mechanical damage to the package.

2. Mounting:

   • Ensure proper heat sinking for continuous operation at high currents.
   • Use recommended soldering profiles to avoid thermal shock.

3. Electrical Connections:

   • Verify correct polarity before applying voltage.
   • Ensure gate drive signals are within specified limits to prevent damage.

4. Operating Conditions:

   • Operate within the specified temperature range (-55°C to +150°C).
   • Do not exceed the maximum ratings listed in the parameter table.

5. Testing:

   • Use appropriate test equipment calibrated to industry standards.
   • Follow safety guidelines when testing high voltage components.

6. Application Notes:

   • Refer to the datasheet for detailed application circuits and derating curves.
   • Consult manufacturer's technical support for specific design issues or questions.

(For reference only)