Details

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BUY MIG150Q101H https://www.utsource.net/itm/p/387135.html
N CHANNEL IGBT HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS

Parameter	Description	Value	Unit
Part Number	Device identifier	MIG150Q101H	-
Type	Device type	MOSFET	-
Configuration	Channel configuration	N-Channel	-
VDS	Drain-to-source voltage	150	V
RDS(on)	On-state resistance at specified conditions	10.1	m惟
ID	Continuous drain current	64	A
Ptot	Total power dissipation (with adequate heatsink)	278	W
TJ	Junction temperature range	-55 to 175	掳C
Qg	Total gate charge	136	nC
Package	Housing type	TO-247	-

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper mounting with a suitable heatsink to manage the thermal resistance.
   • Handle with care to avoid damage to the leads and package.

2. Electrical Connections:

   • Connect the source terminal to the circuit ground.
   • Connect the drain terminal to the load or power supply.
   • Apply gate signals within the specified voltage range to control the switching of the device.

3. Thermal Management:

   • Maintain the junction temperature within the specified operating range to ensure reliable operation.
   • Use appropriate cooling methods such as forced air, heat sinks, or thermal interface materials.

4. Storage Conditions:

   • Store in a dry environment away from direct sunlight and extreme temperatures.
   • Follow ESD handling precautions to prevent damage to the device.

5. Safety Precautions:

   • Always use protective equipment when handling electrical components.
   • Ensure that the device is properly isolated from live circuits during installation and testing.

(For reference only)