Details

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BUY PK110FG120 https://www.utsource.net/itm/p/414877.html
THYRISTOR MODULE

Parameter	Description	Value
Part Number	Device Identifier	PK110FG120
Type	Component Category	MOSFET
Package	Physical Case	TO-220
VDS (V)	Drain-to-Source Voltage	120 V
ID (A)	Continuous Drain Current	110 A
RDS(on) (m惟)	On-State Resistance	1.5 m惟 (Typical at 25掳C)
Qg (nC)	Total Gate Charge	380 nC
VGS(th) (V)	Gate Threshold Voltage	4 V (Max)
Power Dissipation	Maximum Power Dissipation	275 W
Operating Temp	Junction Temperature Range	-55掳C to +175掳C

Instructions for Use:

1. Handling Precautions:

   • Handle with care to avoid damage to the component.
   • Use appropriate ESD protection measures.

2. Mounting:

   • Ensure proper heat sinking when mounting to maintain operational temperature within specified limits.
   • Follow manufacturer guidelines for torque specifications on screws.

3. Electrical Connections:

   • Connect the drain, source, and gate terminals correctly as per circuit design.
   • Ensure all connections are secure to prevent intermittent operation.

4. Operation:

   • Do not exceed the maximum ratings provided in the parameter table.
   • Operate within the recommended operating conditions to ensure reliability and longevity.

5. Storage:

   • Store in a dry, cool environment away from direct sunlight and corrosive substances.
   • Keep in original packaging until ready for use to protect against static damage.

(For reference only)