Details

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BUY CM100DU-24NFH https://www.utsource.net/itm/p/414892.html
MITSUBISHI IGBT MODULES

Parameter	Description	Value	Unit
Device Type	High Voltage Bidirectional MOSFET Thyristor	CM100DU-24NFH	-
Maximum Repetitive	Peak Off-State Voltage (VRRM)	1200	V
Maximum RMS Voltage	(VDRM)	849	V
Maximum On-State	Current (IT(RMS))	100	A
Maximum Non-Repet.	Peak On-State Current (ITSM)	300	A
Maximum Junction	Temperature (TJ(max))	125	°C
Power Dissipation	(PD) at Case Temp = 25°C	76	W
Gate Trigger	Current (IGT)	10	mA
Gate Turn-Off	Current (IGW)	1	A
Mounting Type	Through Hole	-	-
Package	TO-247	-	-

Instructions for Use:

1. Installation:

   • Ensure the device is mounted on a heatsink if operating near maximum current or power dissipation to maintain junction temperature within limits.
   • Secure the device using appropriate mounting hardware suitable for TO-247 package.

2. Handling Precautions:

   • Handle with care to avoid damage to the leads and body.
   • Follow ESD protection guidelines to prevent damage from static electricity.

3. Operating Conditions:

   • Operate within specified voltage, current, and temperature limits to ensure reliable performance.
   • Ensure gate trigger current (IGT) is sufficient for reliable turn-on.
   • Verify that gate turn-off current (IGW) is adequate to ensure proper turn-off.

4. Testing:

   • Perform initial testing under controlled conditions to verify correct operation before full-scale deployment.
   • Regularly monitor device performance and temperature during operation.

5. Storage:

   • Store in a dry, cool place away from direct sunlight and corrosive environments.

These guidelines help ensure optimal performance and longevity of the CM100DU-24NFH device.

(For reference only)