Details
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From old datasheet system
| Parameter | Description | Value |
|---|---|---|
| Part Number | Device identifier | DF40BA80 |
| Type | Component type | MOSFET |
| Package | Housing type | TO-220 |
| Drain Source Voltage (Vds) | Maximum voltage between drain and source | 80V |
| Continuous Drain Current (Ids) | Maximum continuous current through the drain | 16A at 25掳C, 10A at 70掳C |
| Power Dissipation (Ptot) | Maximum power dissipation | 80W |
| Gate Source Voltage (Vgs) | Maximum voltage between gate and source | 卤20V |
| On-State Resistance (Rds(on)) | Resistance when fully on | 0.05惟 at Vgs=10V |
| Junction Temperature (Tj) | Operating temperature range of the junction | -55掳C to +150掳C |
| Storage Temperature (Tstg) | Storage temperature range | -55掳C to +150掳C |
Instructions for Use:
- Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
- Mounting: Ensure proper heat sinking if operating near maximum power dissipation limits. Follow manufacturer guidelines for mounting torque and thermal interface materials.
- Voltage Ratings: Do not exceed the rated voltages for Vds and Vgs to prevent damage or reduced performance.
- Current Handling: Ensure that the continuous drain current does not exceed the specified limits based on the ambient temperature.
- Gate Drive: Apply gate drive voltages within the specified range to ensure reliable operation. Avoid excessive gate-source voltage to prevent gate oxide breakdown.
- Thermal Management: Monitor the junction temperature to avoid overheating. Proper ventilation and cooling mechanisms should be in place.
- Storage: Store in a dry environment within the specified storage temperature range to maintain component integrity.
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