Details

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BUY 7MBP25RA120 https://www.utsource.net/itm/p/416064.html
IGBT-IPM1200V/25A

Parameter	Symbol	Min	Typ	Max	Unit	Description
Blocking Voltage	V(BR)DSS	-	1200	-	V	Maximum rated voltage between drain and source
Continuous Drain Current	ID	-	25	-	A	Maximum continuous current through the drain
Power Dissipation	PD	-	-	240	W	Maximum power dissipation
Junction Temperature	Tj	-55	-	175	掳C	Operating junction temperature range
Storage Temperature	Tstg	-55	-	175	掳C	Storage temperature range
Gate Charge	Qg	-	98	-	nC	Total gate charge
Input Capacitance	Ciss	-	2460	-	pF	Input capacitance at VDS = 400V, VGS = 0V
Output Capacitance	Coss	-	380	-	pF	Output capacitance at VDS = 400V, VGS = 0V
Reverse Transfer Capacitance	Crss	-	260	-	pF	Reverse transfer capacitance at VDS = 400V, VGS = 0V

Instructions for Use:

1. Handling Precautions: The 7MBP25RA120 is sensitive to electrostatic discharge (ESD). Handle with care using ESD-safe procedures.
2. Mounting: Ensure proper thermal management by using a heat sink or appropriate cooling method if operating near maximum power dissipation.
3. Biasing: Apply gate-source voltage (VGS) within specified limits to prevent damage. Typical VGS should be within 卤20V.
4. Overcurrent Protection: Implement overcurrent protection circuits to safeguard against excessive drain current.
5. Temperature Monitoring: Monitor the junction temperature to ensure it remains within operational limits. Avoid prolonged operation at maximum temperatures to extend device life.
6. Storage: Store in a dry, cool place away from direct sunlight and sources of heat. Follow recommended storage temperature guidelines.

For detailed application-specific instructions, refer to the datasheet provided by the manufacturer.

(For reference only)