Details
BUY MBN1200D33A https://www.utsource.net/itm/p/419366.html
| Parameter | Value | Unit |
|---|---|---|
| Part Number | MBN1200D33A | - |
| Type | Schottky Barrier Diode | - |
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 1200 | V |
| Maximum DC Blocking Voltage (VR) | 1000 | V |
| Maximum RMS Voltage (VRMS) | 700 | V |
| Maximum Average Rectified Output Current (IO) | 33 | A |
| Maximum Surge Current (IFSM) | 400 | A |
| Junction Temperature (TJ) | -55 to 175 | 掳C |
| Storage Temperature (TS) | -55 to 150 | 掳C |
| Forward Voltage Drop (VF) at IF = 33A | 1.1 | V |
| Reverse Recovery Time (trr) | 180 | ns |
Instructions for Use:
- Handling and Storage: Store the diode in a dry, cool place within the temperature range specified. Avoid exposure to high humidity or corrosive environments.
- Mounting: Ensure proper heat dissipation if operating near the maximum current ratings. Use appropriate mounting techniques to ensure good thermal contact with heat sinks.
- Electrical Connections: Verify that all electrical connections are secure and capable of handling the rated current. Use insulated tools to prevent short circuits.
- Surge Protection: Be aware of potential surge currents during operation. The device can handle up to 400A surge current, but repeated exposure may reduce lifespan.
- Operating Temperature: Monitor the junction temperature to stay within the specified range (-55掳C to 175掳C). Exceeding these limits can lead to premature failure.
- Reverse Voltage: Do not exceed the maximum repetitive peak reverse voltage (1200V) to avoid breakdown.
- Forward Voltage Drop: At the maximum average rectified output current (33A), expect a forward voltage drop of approximately 1.1V. Design your circuit to accommodate this voltage drop.
Always refer to the manufacturer's datasheet for detailed specifications and application notes.
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