Details

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BUY STE36N50DK https://www.utsource.net/itm/p/424335.html
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V CES	-	-	500	V	Maximum collector-emitter voltage
Gate-Source Voltage	V GS	-15	-	15	V	Maximum gate-source voltage
Continuous Drain Current	I D	-	36	-	A	Continuous drain current at Tc=25掳C
Pulse Drain Current	I DM	-	144	-	A	Pulse drain current (t<10ms)
Power Dissipation	P D	-	-	180	W	Maximum power dissipation at Tc=25掳C
Junction Temperature	T J	-	-	175	掳C	Maximum junction temperature
Storage Temperature	T STG	-55	-	150	掳C	Operating storage temperature range

Instructions for STE36N50DK:

1. Installation and Handling:

   • Handle the device with care to avoid mechanical damage.
   • Ensure proper heat sinking for efficient heat dissipation, especially when operating near maximum power dissipation limits.

2. Electrical Connections:

   • Connect the gate to a suitable driver circuit ensuring that V GS does not exceed the maximum ratings.
   • Ensure all connections are secure and insulated to prevent short circuits.

3. Thermal Management:

   • Monitor the junction temperature to ensure it does not exceed 175掳C.
   • Use appropriate cooling methods such as heatsinks or forced air cooling if necessary.

4. Operating Conditions:

   • Operate within the specified voltage and current limits to avoid damaging the device.
   • For pulse applications, ensure pulse width and frequency do not exceed safe operating area (SOA) limits.

5. Storage and Environment:

   • Store in a dry, cool place away from direct sunlight.
   • Ensure the operating environment stays within the specified storage temperature range (-55掳C to 150掳C).

6. Safety Precautions:

   • Follow all safety guidelines for high voltage and high current applications.
   • Ensure proper grounding and isolation to protect against electrical hazards.

(For reference only)