Details

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BUY IRKH142-12 https://www.utsource.net/itm/p/425204.html
THYRISTOR/DIODE and THYRISTOR/THYRISTOR

Parameter	Description	Value
Part Number	Unique identifier for the component	IRKH142-12
Type	Type of device	MOSFET
Configuration	Configuration type	N-channel
Voltage (Vds)	Drain-source voltage	12V
Current (Id)	Continuous drain current	30A at 25掳C, 20A at 70掳C
Power Dissipation	Maximum power dissipation	60W
Package	Component packaging type	TO-220
Operating Temp	Operating temperature range	-55掳C to +150掳C
Rds(on)	On-resistance	4.9 m惟 max at Vgs=10V
Gate Charge	Total gate charge	85 nC
Input Capacitance	Input capacitance	2000 pF
Body Diode VF	Forward voltage drop of body diode	0.8V

Instructions for Use:

1. Installation:

   • Ensure the correct orientation of the MOSFET during installation.
   • Securely mount the MOSFET to a heatsink if operating near or at maximum current and power levels.

2. Handling:

   • Handle with care to avoid damage to the leads and package.
   • Avoid exposing the device to excessive moisture or static electricity.

3. Electrical Connections:

   • Connect the source terminal to the circuit's ground.
   • Connect the drain terminal to the load.
   • Apply the gate voltage relative to the source to control the MOSFET's on/off state.

4. Thermal Management:

   • Monitor the junction temperature to ensure it does not exceed the maximum operating temperature.
   • Use thermal paste between the MOSFET and heatsink for better heat transfer.

5. Storage:

   • Store in a dry environment away from direct sunlight and sources of heat.

(For reference only)