Details

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BUY AM29F016D-90E4C https://www.utsource.net/itm/p/444595.html
16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory

Parameter	Description	Value
Device	Flash Memory	AM29F016D-90E4C
Manufacturer	Cypress Semiconductor
Technology	CMOS
Density	16 Mbit
Organization	2M x 8, 1M x 16
Vcc (Supply Voltage)	Operating voltage	2.7V to 3.6V
**Vpp (Programming Voltage)	Programming voltage	Same as Vcc
Clock Frequency	Maximum clock frequency	66 MHz
Access Time	Typical access time	70 ns
Page Size	Page size for program/erase operations	256 bytes
Sector Size	Sector size	64 Kbytes
Block Size	Block size	8 Kbytes
Package Type	Package type	TSSOP
Operating Temperature	Industrial temperature range	-40掳C to +85掳C
Endurance	Write/Erase cycles	100,000 cycles
Data Retention	Data retention	20 years

Instructions:

1. Power Supply: Ensure that the supply voltage (Vcc) is within the specified range of 2.7V to 3.6V.
2. Clock Configuration: Configure the clock frequency up to a maximum of 66 MHz for optimal performance.
3. Initialization: Before performing any read/write operations, initialize the device by applying the correct power supply and setting the control signals appropriately.
4. Write Operations: Use page write mode for writing data. Each page can hold up to 256 bytes. Follow the specific command sequence for programming.
5. Erase Operations: Erase operations should be performed in blocks or sectors. A sector is 64 Kbytes, and a block is 8 Kbytes. Ensure no write operation is ongoing before initiating an erase.
6. Temperature Considerations: The device operates reliably within the industrial temperature range of -40掳C to +85掳C.
7. Handling Precautions: Handle the device with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
8. Endurance and Retention: The device supports up to 100,000 write/erase cycles per block and retains data for up to 20 years under recommended storage conditions.

(For reference only)