Details

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BUY K4S281632D-TL75 https://www.utsource.net/itm/p/459229.html
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL

Parameter	Description
Device Type	256Mb SDRAM (32M x 8)
Package	TSSOP40
Operating Voltage (VCC)	2.5V 卤 0.2V
Data Width	8 bits
Bank Architecture	4 banks
Row Address Bits	13 bits
Column Address Bits	9 bits
CAS Latency	CL=2, 3
Burst Lengths	1, 2, 4, 8
Refresh Rate	8K refresh cycles per 64ms
Temperature Range	Commercial: 0掳C to 70掳C
Access Time (tAC)	4.5ns typical
Cycle Time (tRC)	45ns typical
Power Down Mode	Available
Ordering Code	K4S281632D-TL75

Instructions for Use:

1. Power Supply: Ensure the operating voltage is set to 2.5V 卤 0.2V to avoid damage to the device.
2. Initialization: Upon power-up, initialize the SDRAM by performing a reset and setting up the mode register according to the required CAS latency and burst length.
3. Refresh Operations: Implement a refresh cycle every 64ms to maintain data integrity across all memory cells.
4. Address Mapping: Configure the row and column addresses correctly based on the 13-bit row and 9-bit column architecture.
5. Bank Selection: Utilize the bank select lines to access different banks of memory as needed.
6. Read/Write Operations: Execute read and write commands with respect to the specified access and cycle times to ensure reliable data transactions.
7. Power Management: Use the power-down mode during periods of inactivity to reduce power consumption.
8. Handling Precautions: Handle the device carefully to avoid electrostatic discharge (ESD) damage, especially when operating within the commercial temperature range of 0掳C to 70掳C.

(For reference only)