Details

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BUY KM416C1200CT-6 https://www.utsource.net/itm/p/461863.html
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode

Parameter	Description
Part Number	KM416C1200CT-6
Type	DRAM
Organization	1M x 16 bits
Voltage (Vcc/Vdd)	5V
Access Time (taa)	60 ns
Cycle Time (tcyc)	80 ns
Data Width	16 bits
Supply Voltage Range	4.5V to 5.5V
Operating Temperature	-40掳C to +85掳C
Package Type	SOJ (Small Outline J-Lead)
Pin Count	32 pins

Instructions:

1. Power Supply Requirements:

   • Ensure that the supply voltage is within the specified range of 4.5V to 5.5V to prevent damage to the device.

2. Signal Timing:

   • Adhere to the access time and cycle time specifications to ensure reliable data read/write operations. The access time should not exceed 60 ns, and the cycle time should be maintained at 80 ns.

3. Temperature Considerations:

   • Operate the device within the temperature range of -40掳C to +85掳C to maintain optimal performance and reliability.

4. Installation:

   • When installing the KM416C1200CT-6, ensure it is properly seated in a 32-pin SOJ socket or mounted on a compatible PCB.

5. Handling Precautions:

   • Handle the component with care to avoid electrostatic discharge (ESD) damage. Use appropriate ESD protection measures during handling and installation.

6. Interfacing:

   • Connect the data lines (DQ0-DQ15), address lines (A0-A19), control signals (RAS#, CAS#, WE#), and power/ground pins according to the datasheet pinout diagram for proper interfacing with the memory controller.

(For reference only)