Details

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BUY TC7W04FU https://www.utsource.net/itm/p/480703.html
High Speed CMOS 3 InverterCMOS 3

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	VDD	Operating	2.7	-	5.5	V
Output Current	IO	Per Channel	-	100	-	mA
Power Dissipation	PD	Total	-	-	330	mW
Operating Temperature	Topr	Storage	-40	-	85	掳C
Input Leakage Current	IIH	VIH = VDD	-	1	-	渭A
Input Leakage Current	IIL	VIL = 0V	-	1	-	渭A
Output Leakage Current	IOL	VOL = 0V	-	1	-	渭A
Output Leakage Current	IOH	VOH = VDD	-	1	-	渭A

Instructions for TC7W04FU:

1. Power Supply: Ensure the supply voltage (VDD) is within the range of 2.7V to 5.5V.
2. Current Handling: The device can handle up to 100mA per channel output current.
3. Power Management: Be mindful of power dissipation; the total power should not exceed 330mW.
4. Temperature Range: Operate within a temperature range from -40掳C to 85掳C for reliable performance.
5. Input Signals: Keep input leakage currents low, typically around 1渭A for both high and low input states.
6. Output Signals: Similarly, ensure output leakage currents are controlled to approximately 1渭A for both high and low output states.

For detailed specifications and additional information, refer to the manufacturer's datasheet.

(For reference only)