Details

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BUY HM6264BLP8L https://www.utsource.net/itm/p/499960.html
64 k SRAM (8-kword x 8-bit)

Parameter	Description	Value
Package Type	The type of package used for the component	PLCC-28
Operating Voltage (Vcc)	Supply voltage range for optimal operation	4.5V to 5.5V
Memory Capacity	Total memory capacity	64K x 8 bits
Access Time	Maximum time required for a read or write cycle	100ns
Data Retention	Duration data is retained in memory without power	10 years
Operating Temperature	Temperature range for reliable operation	-40掳C to +85掳C
Storage Temperature	Temperature range for storage when not in operation	-55掳C to +125掳C
Power Consumption	Active and standby current	Active: 30mA, Standby: 2渭A
Packaging Material	Material used for packaging	Pb-Free

Instructions for HM6264BLP8L

1. Powering Up:

   • Ensure that the operating voltage (Vcc) is within the specified range of 4.5V to 5.5V.
   • Connect Vss (pin 14) to ground.

2. Address Lines:

   • Use address lines A0-A15 to specify the memory location you wish to access.

3. Data Lines:

   • Data input/output occurs through DQ0-DQ7 pins.

4. Control Signals:

   • Chip Select (CS): Active low. When CS is low, the chip is selected.
   • Output Enable (OE): Active low. Enables data output from the device.
   • Write Enable (WE): Active low. Initiates a write operation when low.

5. Read Operation:

   • Set CS and OE low.
   • Provide the desired address on A0-A15.
   • Data will appear on DQ0-DQ7 after the specified access time.

6. Write Operation:

   • Set CS and WE low.
   • Provide the address on A0-A15 and data on DQ0-DQ7.
   • After the access time, the data will be written to the specified address.

7. Power Down:

   • To minimize power consumption, set CS high when the device is not in use.

8. Handling Precautions:

   • Handle with care to avoid static damage.
   • Store in recommended temperature ranges to ensure longevity.

9. Environmental Considerations:

   • This device is Pb-free, making it compliant with RoHS directives.

(For reference only)