Details

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BUY FDS3890_NL https://www.utsource.net/itm/p/502880.html
80V N-Channel Dual PowerTrench MOSFET

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source On-State Resistance	RDS(on)	VGS = 10V, ID = 1A	-	25	-	m惟
Gate Threshold Voltage	VGS(th)	ID = 250渭A	1.0	1.5	2.5	V
Continuous Drain Current	ID	TC = 25掳C	-	-	3.8	A
Power Dissipation	PD	TC = 25掳C	-	-	460	mW
Junction Temperature	TJ	-	-	-	150	掳C
Storage Temperature Range	TSTG	-	-55	-	150	掳C

Instructions for FDS3890_NL

1. Handling and Storage:

   • Store the device in a dry, cool place.
   • Avoid exposure to high humidity and temperatures outside the specified storage range.

2. Mounting:

   • Ensure that the mounting surface is clean and free from contaminants.
   • Use appropriate thermal management techniques if operating near the maximum junction temperature.

3. Electrical Connections:

   • Connect the source (S), drain (D), and gate (G) terminals correctly according to your circuit design.
   • Ensure that the gate voltage does not exceed the maximum rated value to prevent damage.

4. Operation:

   • Operate within the specified temperature and current limits to ensure reliable performance.
   • Monitor the device temperature, especially under continuous load conditions, to avoid exceeding the maximum junction temperature.

5. Testing:

   • When testing the device, use the specified test conditions for accurate parameter measurements.
   • Refer to the datasheet for detailed test procedures and setup instructions.

For more detailed information, refer to the full datasheet provided by the manufacturer.

(For reference only)