Details

---

BUY 2SK3192 https://www.utsource.net/itm/p/545083.html
Silicon N-channel power MOSFET

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain Voltage	VDS	-	-	500	V	Maximum drain-to-source voltage
Gate-Source Voltage	VGS	-20	-	20	V	Maximum gate-to-source voltage
Continuous Drain Current	ID	-	1.0	-	A	Continuous drain current
Pulse Drain Current	IDM	-	3.0	-	A	Pulse drain current (t=1ms)
Transconductance	GFS	0.8	-	1.2	S	Forward transconductance
Input Capacitance	Ciss	-	900	-	pF	Input capacitance
Output Capacitance	Coss	-	40	-	pF	Output capacitance
Reverse Transfer Capacitance	Crss	-	70	-	pF	Reverse transfer capacitance

Instructions for Use:

1. Biasing Conditions: Ensure the gate-source voltage (VGS) does not exceed 卤20V to prevent damage to the device.
2. Operating Voltage: The maximum drain-to-source voltage (VDS) should not exceed 500V to avoid breakdown.
3. Current Handling: Do not exceed the continuous drain current (ID) of 1.0A or the pulse drain current (IDM) of 3.0A for pulses lasting up to 1ms.
4. Thermal Considerations: Keep the junction temperature within safe limits by providing adequate heat sinking if operating at high currents.
5. Capacitance Awareness: Account for input (Ciss), output (Coss), and reverse transfer capacitance (Crss) in circuit design to ensure stability and performance.
6. Storage and Handling: Store in a dry environment and handle with care to avoid electrostatic discharge (ESD) damage.

For detailed application notes and further specifications, refer to the manufacturer's datasheet.

(For reference only)