Details

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BUY 85HFL20S02 https://www.utsource.net/itm/p/594042.html
FAST RECOVERY DIODES

Parameter	Description	Value	Unit
Part Number	Full part identification	85HFL20S02	-
Type	Device type	MOSFET	-
Configuration	Enhancement or depletion mode	Enhancement	-
Channel	N-channel or P-channel	N-channel	-
Vds (Max)	Maximum Drain-Source Voltage	20	V
Id (Max)	Maximum Drain Current at 25掳C	2.0	A
Rds(on) (Max)	On-State Resistance at 25掳C	0.016	惟
Power Dissipation	Maximum Power Dissipation	0.4	W
Package	Physical package	SOT-23	-
Operating Temp.	Junction Temperature Range	-40 to +125	掳C

Instructions for Use:

1. Handling Precautions: Handle the device with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.
2. Mounting: Ensure proper mounting and soldering techniques are used to prevent overheating and ensure good electrical connections.
3. Thermal Management: Monitor operating temperatures to ensure they remain within the specified range. Consider heat sinks if necessary.
4. Voltage Limits: Do not exceed the maximum drain-source voltage (Vds) to prevent breakdown.
5. Current Handling: Operate within the specified current limits to avoid excessive heating and potential failure.
6. Storage Conditions: Store in a dry, cool environment away from direct sunlight and corrosive substances.

For detailed specifications and application notes, refer to the manufacturer's datasheet.

(For reference only)