Details

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BUY IRGTI140U06 https://www.utsource.net/itm/p/627947.html
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V VBRCES | 170A IC

Parameter	Symbol	Min	Typ	Max	Unit	Description
Collector-Emitter Voltage	V CES			600	V	Maximum voltage between collector and emitter
Gate-Emitter Voltage	V GES			卤20	V	Maximum voltage between gate and emitter
Continuous Collector Current	I C		140		A	Continuous current at the collector
Pulse Collector Current	I CM		560		A	Peak pulse current at the collector
Power Dissipation	P TOT			1800	W	Total power dissipation
Junction Temperature	T J	-55		150	掳C	Operating temperature range
Storage Temperature	T STG	-55		150	掳C	Storage temperature range

Instructions for IRGTI140U06

1. Handling Precautions:

   • Avoid exposing the device to temperatures outside the specified operating range.
   • Use appropriate heat sinks or cooling methods to manage power dissipation.

2. Installation:

   • Ensure proper mounting to avoid mechanical stress on the device.
   • Follow manufacturer guidelines for torque specifications when attaching screws or clamps.

3. Electrical Connections:

   • Connect the gate to a suitable driver circuit to ensure reliable switching.
   • Keep wiring short and direct to minimize inductance, especially for high-frequency applications.

4. Testing:

   • Before installing into the final application, test the device under controlled conditions to verify performance.
   • Monitor junction temperature during operation to prevent overheating.

5. Safety Considerations:

   • Always use protective equipment when handling high-voltage circuits.
   • Ensure proper isolation and grounding to protect against electrical hazards.

For detailed specifications and more advanced usage, refer to the official datasheet provided by the manufacturer.

(For reference only)