Details

---

BUY IRF7210 https://www.utsource.net/itm/p/660160.html
TRANSISTOR | MOSFET | P-CHANNEL | 12V VBRDSS | 16A ID | SO

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	-	20	V
Gate-Source Voltage	VGS	-10	-	10	V
Continuous Drain Current	ID	-	7	-	A	TC = 25掳C, Rth(j-a) = 62.5掳C/W
Pulse Drain Current	IDM	-	34	-	A	tp = 10 渭s, IGBT = off
Total Power Dissipation	PD	-	18	-	W	TC = 25掳C
Junction Temperature	Tj	-55	-	175	掳C
Storage Temperature	Tstg	-55	-	150	掳C
Thermal Resistance, Junction to Ambient	R胃JA	-	62.5	-	掳C/W

Instructions for Use:

1. Handling and Storage:

   • Store in a cool, dry place away from direct sunlight.
   • Handle with care to avoid damage to the leads and body.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Follow manufacturer guidelines for PCB layout to minimize parasitic inductance.

3. Electrical Connections:

   • Connect gate to control circuitry using short leads to minimize noise.
   • Ensure source is properly grounded to prevent floating potentials.

4. Operating Limits:

   • Do not exceed the maximum ratings listed in the table.
   • Operate within specified temperature ranges to ensure reliability.

5. Testing:

   • Test devices under controlled conditions before incorporating into final designs.
   • Use appropriate safety measures when testing high voltage or current circuits.

(For reference only)