Details

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BUY STD20NF06T4 https://www.utsource.net/itm/p/679865.html
N-CHANNEL 60V - 0.032OHM - 24A DPAK STripFET TM II POWER MOSFET

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	V(DS)	-	-	60	V
Gate-Source Voltage	V(GS)	-15	-	15	V
Continuous Drain Current	I(D)	-	-	20	A	Tc = 25掳C
Pulse Drain Current	I(D pul)	-	-	40	A	tp = 10 渭s
Power Dissipation	P(TOT)	-	-	40	W	Ta = 25掳C
Junction Temperature	Tj	-55	-	150	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions: The STD20NF06T4 is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions.

2. Mounting: Ensure proper thermal management by using a heat sink if necessary, especially when operating at high currents or in environments where the temperature exceeds typical room conditions.

3. Voltage Limits: Do not exceed the maximum ratings listed in the table. Exceeding these limits can cause permanent damage to the device.

4. Current Ratings: The continuous drain current rating is specified at a case temperature of 25掳C. For higher ambient temperatures, derate the current accordingly to avoid exceeding the power dissipation limit.

5. Pulse Current: Pulse current capability is defined for very short durations (typically 10 渭s). Ensure that the average power does not exceed the maximum power dissipation rating.

6. Thermal Considerations: Monitor junction temperature closely. Operation at high junction temperatures can reduce the lifespan of the device.

7. Storage and Operating Temperature: Ensure that the device remains within the specified storage and operating temperature ranges to maintain reliability and performance.

8. Gate Drive: Apply gate voltages within the specified range to prevent gate oxide breakdown and ensure reliable switching operation.

9. Testing: Before integrating into a final design, test the device under actual operating conditions to ensure it meets all performance requirements.

(For reference only)