Details

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BUY 2SJ529 https://www.utsource.net/itm/p/680740.html
Silicon P Channel MOS FETPMOSFET

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Collector-Emitter Voltage	V CES	IC = 0, Tc = 25掳C	-	-	450	V
Emitter-Collector Voltage	V ECS	IE = 0, Tc = 25掳C	-	-	450	V
Base-Emitter Voltage	V BES	IC = -1mA, Tc = 25掳C	-	-3.5	-2	V
Continuous Collector Current	I CS	Tc = 25掳C	-	-	-15	A
Pulse Collector Current	I CM	Tp = 1ms, Tc = 25掳C	-	-	-30	A
DC Current Gain	h FE	IC = -1A, IB = -0.1A, Tc = 25掳C	10	60	120	-
Transition Frequency	f T	IC = -1A, V CE = -25V, Tc = 25掳C	-	7	-	MHz

Instructions for Use:

1. Handling Precautions: The 2SJ529 is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper heat dissipation by mounting the transistor on a suitable heatsink if operating at high currents or power levels.
3. Biasing: Carefully set the base current to achieve the desired collector current within the specified limits to avoid damage due to excessive current.
4. Operating Temperature: The device is rated for operation between -55掳C to +150掳C. Ensure that the ambient temperature does not exceed these limits.
5. Storage: Store in a dry place away from direct sunlight and sources of heat.

Notes:

• Always refer to the manufacturer's datasheet for the most accurate and detailed information.
• Operating outside the specified electrical and thermal limits can cause irreversible damage to the device.

(For reference only)