Details

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BUY STB14NK60ZT4 https://www.utsource.net/itm/p/682195.html
N-CHANNEL 600V-0.45ohm-13.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	V(BR)DSS	-	600	-	V	Drain-Source Breakdown Voltage
Continuous Drain Current	ID	-	-	14	A	Continuous Drain Current (Tc = 25掳C)
Pulse Drain Current	Ibm(D)	-	-	37	A	Non-repetitive Peak Pulse Current
Gate Threshold Voltage	VGS(th)	2.0	2.5	4.0	V	Gate Threshold Voltage
On-State Resistance	RDS(on)	-	80	-	m惟	On-State Resistance at VGS = 10V, ID = 14A
Total Power Dissipation	PD	-	-	290	W	Total Power Dissipation (Tc = 25掳C)
Junction Temperature	TJ	-20	-	175	掳C	Operating Junction Temperature Range
Storage Temperature	Tstg	-55	-	150	掳C	Operating and Storage Temperature Range

Instructions:

1. Handling Care: The STB14NK60ZT4 is sensitive to electrostatic discharge (ESD). Use proper ESD precautions when handling.
2. Mounting: Ensure adequate heat sinking for high current or power applications to maintain junction temperature within specified limits.
3. Gate Drive: Apply gate voltage carefully. Exceeding the maximum gate-source voltage can cause device failure.
4. Pulse Current: When operating with pulse currents, ensure they do not exceed the non-repetitive peak pulse current rating.
5. Thermal Considerations: Monitor thermal conditions closely during operation to prevent overheating.
6. Storage Conditions: Store in a dry environment within the specified storage temperature range to avoid damage.
7. Soldering: Follow recommended soldering profiles to avoid thermal shock which could damage the device.

For detailed application notes and further technical information, refer to the official datasheet provided by STMicroelectronics.

(For reference only)