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Intel® Embedded Flash Memory (J3 v. D) (32, 64, and 128 Mbit)
| Parameter | Description |
|---|---|
| Part Number | TE28F640J3D75 |
| Type | Flash Memory |
| Memory Capacity | 64 Mbit (8 MByte) |
| Package Type | TSOP-II (Thin Small Outline Package) |
| Pin Count | 48 pins |
| Operating Voltage | 3.3V |
| Data Bus Width | 8-bit |
| Access Time | 70 ns |
| Temperature Range | -40掳C to +85掳C |
| Programming Voltage | Vpp = 12V (for block erase), Vcc = 3.3V (for page program and read) |
| Endurance | 100,000 write/erase cycles |
| Data Retention | 10 years |
| Organization | 8M x 8 |
Instructions for Use
Power Supply Connection:
- Connect the Vcc pin to a 3.3V power supply.
- Ensure that the ground (GND) pin is connected to a stable ground.
Address Lines:
- Connect address lines A0-A20 to the system address bus for accessing the memory locations.
Data Lines:
- Connect data lines DQ0-DQ7 to the system data bus for data transfer.
Control Signals:
- Connect control signals such as Chip Enable (CE#), Output Enable (OE#), Write Enable (WE#), and Write Protect (WP#) as per the system requirements.
Initialization:
- Before performing any read or write operations, ensure the device is properly initialized by setting the appropriate control signals.
Read Operation:
- Set CE# low to select the device.
- Set OE# low to enable output buffers.
- Apply the desired address to the address lines.
- Data will be available on the data lines after the specified access time.
Write Operation:
- Set CE# low to select the device.
- Set WE# low to initiate a write cycle.
- Apply the desired address and data to the address and data lines respectively.
- Ensure WP# is high to allow writing.
Erase Operation:
- Perform a block erase by applying the correct command sequence as specified in the datasheet.
- Block erase requires Vpp to be applied to the Vpp pin.
Handling Precautions:
- Avoid exceeding the maximum ratings specified in the datasheet.
- Ensure proper heat dissipation if operating at higher temperatures or frequencies.
Storage:
- Store in a dry environment to prevent moisture damage.
- Handle with care to avoid electrostatic discharge (ESD) damage.
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