Details

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BUY BSP75GTA https://www.utsource.net/itm/p/754323.html
60V self-protected low-side IntelliFETTM MOSFET switch

Parameter	Symbol	Value	Unit	Description
Collector-Emitter Voltage	VCES	700	V	Maximum voltage between collector and emitter with base open
Emitter-Collector Voltage	VECS	-5	V	Maximum reverse voltage between emitter and collector
Collector Current	IC	14	A	Continuous collector current
Pulse Collector Current	ICM	28	A	Non-repetitive peak pulse collector current
Power Dissipation	Ptot	125	W	Total power dissipation at Tc = 25°C
Junction Temperature	Tj	-50 to 175	°C	Operating junction temperature range
Storage Temperature	Tstg	-55 to 150	°C	Storage temperature range

Instructions for BSP75GTA

1. Handling Precautions:

   • Avoid exceeding the maximum ratings listed in the parameter table to prevent damage.
   • Use appropriate heat sinks when operating near maximum power dissipation.

2. Mounting:

   • Ensure proper mounting to maintain thermal performance, especially if operating at high currents or temperatures.
   • Follow mechanical specifications for torque and alignment.

3. Electrical Connections:

   • Verify correct polarity connections to avoid reverse bias conditions beyond specified limits.
   • Use insulated tools to prevent short circuits during installation.

4. Operational Environment:

   • Operate within the specified junction and storage temperature ranges to ensure reliable performance.
   • Consider environmental factors such as humidity and contamination that can affect performance.

5. Testing:

   • Perform initial testing under controlled conditions to validate the device's operation before full-scale implementation.
   • Regularly monitor operational parameters to ensure they remain within safe limits.

(For reference only)