Details
BUY 80SQ045NRLG https://www.utsource.net/itm/p/760625.html
Axial Lead Rectifier
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Breakdown Voltage | BVdss | - | - | 80 | V | Drain-Source Breakdown Voltage |
| Continuous Drain | Id | - | - | 45 | A | Current at Tc = 25掳C |
| Pulse Drain Current | Ipm | - | - | 130 | A | Pulse Current (t < 10渭s) |
| Gate Threshold | Vgs(th) | 1.0 | 2.0 | 3.0 | V | Gate-Source Threshold Voltage |
| On-State Resistance | Rds(on) | - | 7.5 | - | m惟 | @ Vgs = 10V, Id = 20A |
| Input Capacitance | Ciss | - | 1600 | - | pF | @ Vds = 15V, f = 1MHz |
| Output Capacitance | Coss | - | 120 | - | pF | @ Vds = 15V, f = 1MHz |
| Reverse Transfer | Crss | - | 115 | - | pF | Capacitance @ Vds = 15V, f = 1MHz |
| Total Gate Charge | Qg | - | 29 | - | nC | @ Vds = 15V, Id = 20A |
Instructions for Use:
- Handling Precautions: The 80SQ045NRLG is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection.
- Mounting: Ensure proper thermal management when mounting the device. Use a heatsink if necessary to dissipate heat generated by high current operations.
- Operating Conditions: Operate within specified voltage and current limits to avoid damage or reduced performance.
- Gate Drive Requirements: Apply gate voltages within the recommended range to ensure reliable switching and minimize on-state resistance.
- Storage: Store in a dry, cool environment to prevent moisture damage. Follow recommended storage practices for semiconductor devices.
For detailed application notes and more specific guidelines, refer to the manufacturer's datasheet.
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