Details
BUY IS61C512-15J https://www.utsource.net/itm/p/763620.html
x8 SRAM
| Parameter | Description | Value |
|---|---|---|
| Product Name | High-Speed CMOS Static RAM | IS61C512-15J |
| Organization | 512 x 8 | |
| Supply Voltage | VCC | 4.5V to 5.5V |
| Access Time | tAA (Access Time) | 15ns max |
| Output Drive Capability | IOL, IOH | 16mA, -16mA |
| Power Consumption | Active Current | 30mA max |
| Standby Current | ICC (Standby) | 20渭A max |
| Operating Temperature | Commercial (-C), Industrial (-I) | 0掳C to +70掳C, -40掳C to +85掳C |
| Package Type | PDIP, SOIC |
Instructions for Use:
- Power Supply: Ensure that the supply voltage is within the specified range of 4.5V to 5.5V to prevent damage to the device.
- Timing Requirements: The access time of 15ns must be adhered to for reliable data read/write operations.
- Handling Precautions: This device is sensitive to electrostatic discharge (ESD); use appropriate ESD protection measures during handling and installation.
- Temperature Considerations: Operate within the temperature ranges provided for commercial or industrial environments as applicable.
- Installation: Carefully insert the component into the socket or solder it onto the PCB ensuring correct orientation and alignment.
- Testing: After installation, perform functional testing under normal operating conditions to ensure proper operation.
For detailed specifications and additional information, refer to the manufacturer's datasheet.
(For reference only)View more about IS61C512-15J on main site
