Details

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BUY SI4542DY https://www.utsource.net/itm/p/810884.html
MOSFET, SI4542, DUAL COMPLEMENTARY, SOIC-8

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Supply Voltage	VDD	Operating	2.0		5.5	V
Operating Temperature	Toper		-40		85	掳C
Storage Temperature	Tstg		-65		150	掳C
Output Current per Channel	IOUT	Continuous, per channel		300		mA
Total Output Current	ITOT	All channels on		1.2		A
Power Dissipation	PD	TJ = 25掳C		1.0		W
Junction Temperature	TJ	Absolute Maximum			150	掳C

Instructions for SI4542DY

1. Power Supply Requirements:

   • Ensure the supply voltage (VDD) is within the range of 2.0V to 5.5V.
   • Use appropriate decoupling capacitors close to the power pins to maintain stability.

2. Temperature Considerations:

   • The device can operate in temperatures ranging from -40掳C to 85掳C.
   • Store the device in temperatures between -65掳C and 150掳C.

3. Current Handling:

   • Each channel can handle up to 300mA continuously.
   • When all channels are active, ensure the total current does not exceed 1.2A.

4. Thermal Management:

   • Monitor the junction temperature to not exceed 150掳C.
   • Keep the power dissipation under 1.0W at a junction temperature of 25掳C to avoid overheating.

5. Installation and Handling:

   • Follow proper ESD precautions during handling.
   • Ensure correct orientation and pin alignment when mounting on the PCB.

Note: For detailed specifications and application notes, refer to the official datasheet provided by the manufacturer.

(For reference only)