Details

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BUY BC807-40W,115 https://www.utsource.net/itm/p/826020.html
45 V, 500 mA PNP general purpose transistors - Complement: BC817-40W ; fT min: 80 MHz; hFE max: 600 ; hFE min: 250 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: 45 V; Package: SOT323 SC-70; Container: Tape reel smd

Parameter	Value	Unit
Type	BC807-40W,115	-
Collector-Emitter Voltage (VCEO)	60	V
Collector-Base Voltage (VCBO)	65	V
Emitter-Base Voltage (VEBO)	5	V
Continuous Collector Current (IC)	800	mA
Power Dissipation (PD)	400	mW
Transition Frequency (fT)	300	MHz
Storage Temperature Range (TSTG)	-65 to 150	掳C
Operating Temperature Range (TA)	-65 to 150	掳C

Instructions for Use:

1. Handling Precautions: The BC807-40W,115 is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
2. Mounting: Ensure proper mounting and alignment to avoid mechanical stress on the leads.
3. Soldering: Use a soldering temperature not exceeding 260掳C for no more than 10 seconds per operation to prevent damage.
4. Heat Sinking: For applications where the transistor may dissipate significant power, ensure adequate heat sinking to maintain operating temperatures within specified limits.
5. Biasing: Proper biasing of the base-emitter junction is crucial to achieve optimal performance and stability.
6. Testing: Test the device under controlled conditions before incorporating it into final designs to ensure compliance with specifications.

(For reference only)