Details

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BUY VND7NV04TR-E https://www.utsource.net/itm/p/829109.html
OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET

Parameter	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	Vcc	4.5	-	20	V	Operating supply voltage range
Continuous Drain Current	Idc	-	700	-	mA	Continuous drain current
Peak Pulse Current	Ipp	-	1.2	-	A	Peak pulse current (t < 1 ms)
Gate-Source Voltage	Vgs(th)	1.0	-	2.0	V	Gate-source threshold voltage
On-State Resistance	Rds(on)	-	0.6	-	Ω	On-state resistance at Vgs = 4.5V
Off-State Leakage Current	Idss	-	10	-	μA	Off-state leakage current
Storage Temperature	Tstg	-55	-	150	°C	Storage temperature range
Operating Junction Temperature	Tj	-40	-	125	°C	Operating junction temperature range

Instructions for VND7NV04TR-E:

1. Power Supply: Ensure the supply voltage (Vcc) is within the specified range of 4.5V to 20V to avoid damage or improper operation.
2. Current Handling: Do not exceed the continuous drain current (Idc) of 700mA or the peak pulse current (Ipp) of 1.2A for pulses shorter than 1ms.
3. Gate Control: Apply a gate-source voltage (Vgs) within the threshold range (1.0V to 2.0V) to turn the device on. For optimal performance, use a higher Vgs such as 4.5V.
4. Thermal Management: Keep the operating junction temperature (Tj) within -40°C to 125°C. Use appropriate heat sinking if necessary.
5. Storage Conditions: Store the device in an environment where the temperature remains between -55°C and 150°C.
6. Leakage Consideration: Be aware of the off-state leakage current (Idss), which can be up to 10μA. This should be considered in low-power applications.
7. Handling Precautions: Follow standard ESD (Electrostatic Discharge) precautions when handling the component to prevent damage.

For detailed application notes and further specifications, refer to the manufacturer's datasheet.

(For reference only)