Details

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BUY IRFI530NPBF https://www.utsource.net/itm/p/830426.html
HEXFET㈢ Power MOSFET

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	V(DSS)				100	V
Gate-Source Voltage	V(GSS)		-15		15	V
Continuous Drain Current	I(D)	Tc = 25°C		9.0		A
		Tc = 75°C		6.4		A
Pulse Drain Current	I(DM)	Tc = 25°C, tp = 10ms		36		A
Power Dissipation	P(TOT)	Tc = 25°C		80		W
Junction Temperature	T(J)		-55		150	°C
Total Gate Charge	Q(G)	VGS = ±15V		45		nC

Instructions for IRFI530NPBF:

1. Handling and Storage:

   • Store in a dry, cool place.
   • Handle with care to avoid damage to the leads or body.

2. Mounting:

   • Ensure proper heat sinking if operating at high current levels.
   • Use appropriate mounting hardware to secure the device.

3. Electrical Connections:

   • Verify all connections are correct before applying power.
   • Avoid exceeding the maximum ratings listed in the table.

4. Operation:

   • Operate within specified temperature ranges to ensure reliability.
   • Do not exceed the maximum drain-source voltage or gate-source voltage to prevent damage.

5. Testing:

   • When testing, use pulse testing methods where applicable to avoid overheating.
   • Follow safety protocols when handling high voltages and currents.

6. Application Notes:

   • Refer to the manufacturer's application notes for detailed design considerations and circuit recommendations.

(For reference only)