Details

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BUY IRF7854TRPBF https://www.utsource.net/itm/p/847383.html
80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package; Similar to IRF7854 with Tape and Reel Packaging

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source On-Resistance	RDS(on)	-	18	-	m惟	VGS = 10V, ID = 20A
Gate Charge	Qg	-	79	-	nC	VDS = 25V, ID = 20A, VGS = 卤10V
Input Capacitance	Ciss	-	3400	-	pF	VDS = 25V, f = 1MHz
Output Capacitance	Coff	-	650	-	pF	VDS = 25V, f = 1MHz
Total Gate Charge	QG	-	84	-	nC	VDS = 25V, ID = 20A, VGS = 卤10V
Continuous Drain Current	ID	-	-	20	A	TC = 25掳C
Pulse Drain Current	Ibm	-	-	120	A	t = 10渭s, Duty Cycle = 1%
Power Dissipation	PD	-	-	140	W	TC = 25掳C
Junction Temperature	Tj	-	-	175	掳C	-
Storage Temperature	Tstg	-55	-	150	掳C	-

Instructions for IRF7854TRPBF:

1. Handling and Storage:

   • Store in a dry place away from direct sunlight.
   • Handle with care to avoid damage to the leads and body.

2. Mounting:

   • Ensure proper thermal management by using heatsinks if necessary.
   • Use appropriate mounting hardware to secure the device.

3. Electrical Connections:

   • Connect gate, drain, and source terminals correctly.
   • Ensure gate drive voltage does not exceed maximum ratings.

4. Operation:

   • Operate within specified temperature and current limits.
   • Monitor junction temperature to prevent overheating.

5. Safety:

   • Follow all safety guidelines when handling high-power devices.
   • Ensure adequate ventilation in enclosed environments.

6. Testing:

   • Test the device parameters under controlled conditions to ensure reliability.
   • Refer to datasheet for detailed testing procedures.

(For reference only)